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GaN NMR Lecture: James P. Yesinowski, "Multinuclear NMR of Gallium Nitride to Probe Charge and Spin Effects in Semiconductor Films"

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GaN NMR Lecture: James P. Yesinowski, "Multinuclear NMR of Gallium Nitride to Probe Charge and Spin Effects in Semiconductor Films"
When Nov 02, 2010
from 02:00 PM to 03:00 PM
Where MR329
Contact Name
Contact Phone 212-650-5625
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Multinuclear NMR of Gallium Nitride to Probe Charge and Spin Effects in Semiconductor Films
 
 
 
 
James P. Yesinowski
 
Materials Chemistry Branch, Chemistry Division
 
Naval Research Laboratory
 
Washington DC 20375
 
 
 
Gallium nitride, a wide bandgap III-V semiconductor, is the subject of intensive R&D worldwide because of its many electronic and optoelectronic applications. In my talk I will illustrate how NMR studies of the quadrupolar nuclei in GaN (69Ga, 71Ga and 14N) can provide unique information on structure and the effects of electronic charge and spin resulting from dopants and defects. In addition, new approaches to significantly enhance the 69,71Ga NMR detection sensitivity in thin films of GaN made by MOCVD and MBE growth will be discussed. These include the use of flat rf coils, population transfer pulse sequences, trains of pulses to extend detection times, and magic-angle spinning (MAS) NMR of oriented single-crystals.
 
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